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Toshiba Announces Gallium Nitride Power FET with World's Highest Output Power in Ku-band
October 09, 2007
Toshiba Announces Gallium Nitride Power FET with World's Highest Output Power in Ku-band
TOKYO - Toshiba Corporation today announced that it has developed a gallium nitride (GaN) power field effect transistor (FET) for the Ku-band (12GHz to 18GHz) frequency range that achieves an output power of 65.4W at 14.5GHz, the highest level of performance yet reported at this frequency band. More
Toshiba Announces Gallium Nitride Power FET with World's Highest Output Power in X-band
November 13, 2006
Toshiba Announces Gallium Nitride Power FET with World's Highest Output Power in X-band
Tokyo-Toshiba Corporation today announced development of a gallium nitride (GaN) power field effect transistor (FET) that far surpasses the operating performance of gallium arsenide (GaAs) FET widely used in microwave solid-state amplifiers for radar and satellite microwave communications in the 8GHz to 12GHz X-band frequency range. More
Toshiba Announces Gallium Nitride Power FET with World's Highest Output Power in Ku-band
September 12, 2005
Toshiba Announces Gallium Nitride Power FET with World's Highest Output Power in Ku-band
Tokyo-Toshiba Corporation today announced development of a gallium nitride (GaN) power field effect transistor (FET) that far surpasses the operating performance of the gallium arsenide (GaAs) FET widely used in base stations for terrestrial and satellite microwave communications. More

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Technical Article

October 31, 2014
Asia Pacific Microwave Conference 2014 (APMC), November '14
GaN HEMTs are Still Ongoing( PDF/245KB、 open this site in another window)
October 31, 2014
European Microwave Conference 2014 (EuMC 2014), November '14
A 20-Watt Ka-Band GaN High Power Amplifier MMIC( PDF/97KB、 open this site in another window)
July 01, 2011
International Microwave Symposium 2011 (IMS2011), June '11
GaN HEMTs with Pre-match for Ka-Band with 18W( PDF/147KB、 open this site in another window)
June 01, 2011
Compound Semiconductor Manufacturing Technology Conference (CS MANTECH2011), May '11
A Difference of Thermal Design Between GaN and GaAs( PDF/1.93MB、 open this site in another window. This links to the outside website.)
Effects of Via Layout on AlGaN/GaN HEMTs at Ka-band( PDF/3.58MB、 open this site in another window. This links to the outside website.)
November 01, 2010
Compound Semiconductor IC Symposium 2010 (CSICS2010), Octorber '10
GaN HEMTs with Pre-match for Ka-Band with 20W( PDF/97KB、 open this site in another window)
September 01, 2009
Microwaves &RF, August '09
Sorting Through News From The Boston MTT-S open this site in another window. This links to the outside website.)
July 01, 2009
International Microwave Symposium 2009 (IMS2009), June '09
Ku-Band AlGaN/GaN-HEMT with over 30% of PAE( PDF/290KB、 open this site in another window)
Ku-Band, 120-W Power Amplifier Using Gallium Nitride FETs( PDF/2.04MB、 open this site in another window)
June 01, 2009
Compound Semiconductor Manufacturing Technology Conference (CS MANTECH2009), May '09
Influence of SiC Substrate Misorientation on AlGaN/GaN HEMTs Performance
( PDF/536KB、 open this site in another window. This links to the outside website.)
June 01, 2009
Microwave Journal, May '09
Development Report of Power FETs for Solid-state Power Amplifiers from GaAs to GaN Devices
( open this site in another window. This links to the outside website.)

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